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  2SD1558, 2sd1599 silicon npn triple diffused application low frequency power amplifier complementary pair with 2sb1007 outline to-220ab 2.6 k w (typ) 1 2 3 1. base 2. collector (flange) 3. emitter 1 2 3 absolute maximum ratings (ta = 25c) ratings item symbol 2SD1558 2sd1599 unit collector to base voltage v cbo 60 80 v collector to emitter voltage v ceo 60 80 v emitter to base voltage v ebo 77v collector current i c 44a collector peak current i c(peak) 88a collector power dissipation p c * 1 40 40 w junction temperature tj 150 150 c storage temperature tstg C55 to +150 C55 to +150 c note: 1. value at t c = 25c.
2SD1558, 2sd1599 2 electrical characteristics (ta = 25c) 2SD1558 2sd1599 item symbol min typ max min typ max unit test conditions collector to emitter breakdown voltage v (br)ceo 60 80 v i c = 25 ma, r be = emitter to base breakdown voltage v (br)ebo 7 7 vi e = 50 ma, i c = 0 collector cutoff current i cbo 100 100 a v cb = 60 v, i e = 0 i ceo 10 10 av ce = 50 v, r be = dc current tarnsfer ratio h fe 1000 20000 1000 20000 v ce = 3 v, i c = 2 a* 1 collector to emitter saturation voltage v ce(sat)1 1.5 1.5 v i c = 2 a, i b = 4 ma* 1 v ce(sat)2 3.0 3.0 v i c = 4 a, i b = 40 ma* 1 base to emitter saturation voltage v be(sat)1 2.0 2.0 v i c = 2 a, i b = 4 ma* 1 v be(sat)2 3.5 3.5 v i c = 4 a, i b = 40 ma* 1 turn on time t on 0.5 0.5 s i c = 2 a, i b1 = Ci b2 = 4 ma storage time t stg 6.0 6.0 s fall time t f 1.0 1.0 s note: 1. pulse test.
2SD1558, 2sd1599 3 0 50 100 150 case temperature t c ( c) collector power dissipation pc (w) maximum collector dissipation curve 60 40 20 collector to emitter voltage v ce (v) collector current i c (a) area of safe operation 12 510 20 50 100 0.5 1.0 20 10 5 2 0.2 0.1 0.05 0.02 i c (peak) ta = 25 c 1 shot pulse 2sd1588 2sd1599 dc operation pw = 10 ms 1 ms 100 m s 1 m s i c (peak) collector to emitter voltage v ce (v) collector current i c (a) typical output characteristics 012345 0 3 2 1 5 4 2.5 3.0 2.0 1.5 1.0 p c = 40 w 0.5 ma t c = 25 c l b = 0 100 30 1,000 300 3,000 30,000 10,000 collector current i c (a) dc current transfer ratio h fe 0.3 0.1 1.0 3 10 dc current transfer ratio vs. collector current v ce = 3 v pulse ta = 75 c 25 c ?5 c
2SD1558, 2sd1599 4 0.1 0.2 0.5 1.0 2 5 10 collector current i c (a) 0.1 0.3 1.0 3 10 saturation voltage vs. collector current collector to emitter saturation voltage v ce (sat) (v) base to emitter saturation voltage v be (sat) (v) ta = 25 c pulse i c /i b = 200 500 500 200 v ce (sat) v be (sat) 0.1 0.2 0.5 1.0 2 5 10 switching time t ( m s) collector current i c (a) 0.1 0.2 0.5 1.0 2 5 10 switching time vs. collector current ta = 25 c t stg t f t on v cc = 30 v i c = 500 i b1 = ?00 i b2 0.1 0.3 1.0 3 10 30 100 time t thermal resistance q j-c ( c/w) 0.1 1.0 1.0 10 10 (s) 100 (ms) transient thermal resistance 1 ms to 100 ms 100 ms to 10 s t c = 25 c
2SD1558, 2sd1599 5 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 for further information write to: hitachi america, ltd. semiconductor & ic div. 2000 sierra point parkway brisbane, ca. 94005-1835 u s a tel: 415-589-8300 fax: 415-583-4207 hitachi europe gmbh electronic components group continental europe dornacher stra? 3 d-85622 feldkirchen m?nchen tel: 089-9 91 80-0 fax: 089-9 29 30 00 hitachi europe ltd. electronic components div. northern europe headquarters whitebrook park lower cookham road maidenhead berkshire sl6 8ya united kingdom tel: 0628-585000 fax: 0628-778322 hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 0104 tel: 535-2100 fax: 535-1533 hitachi asia (hong kong) ltd. unit 706, north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel: 27359218 fax: 27306071


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